SBCP53-16T1G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.In the part, the transition frequency is 50MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1.5A volts.
SBCP53-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 50MHz
SBCP53-16T1G Applications
There are a lot of ON Semiconductor SBCP53-16T1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
