MSD602-RT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 30mA, 300mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.Single BJT transistor can take a breakdown input voltage of 50V volts.Collector current can be as low as 500mA volts at its maximum.
MSD602-RT1G Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
MSD602-RT1G Applications
There are a lot of ON Semiconductor MSD602-RT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
