MJE15032G

Name: MJE15032G
Brand: ON Semiconductor
SKU: MJE15032G
Price: 1.66000 USD
Availability: InStock

new-10%

Manufacturer part number:MJE15032G

Manufacturer:ON Semiconductor

Description:MJE15032G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MJE15032G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	250V
Max Power Dissipation	2W
Peak Reflow Temperature (Cel)	260
Current Rating	8A
Frequency	30MHz
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	2W
Case Connection	COLLECTOR
Transistor Application	AMPLIFIER
Gain Bandwidth Product	30MHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	250V
Max Collector Current	8A
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 2A 5V
Current - Collector Cutoff (Max)	10μA ICBO
JEDEC-95 Code	TO-220AB
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage	250V
Transition Frequency	30MHz
Collector Emitter Saturation Voltage	500mV
Collector Base Voltage (VCBO)	250V
Emitter Base Voltage (VEBO)	5V
hFE Min	10
Height	15.748mm
Length	10.2616mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free