BC847B-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.A collector emitter saturation voltage of 90mV allows maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.300MHz is present in the transition frequency.Input voltage breakdown is available at 45V volts.Collector current can be as low as 200mA volts at its maximum.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated BC847B-7-F applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
