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BCP55-16TF

BCP55-16TF

BCP55-16TF

Nexperia USA Inc.

BCP55-16TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP55-16TF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Pin Count4
Power - Max 1.3W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 155MHz
RoHS StatusROHS3 Compliant
In-Stock:90803 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.09000$0.09
500$0.0891$44.55
1000$0.0882$88.2
1500$0.0873$130.95
2000$0.0864$172.8
2500$0.0855$213.75

BCP55-16TF Product Details

BCP55-16TF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

BCP55-16TF Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP55-16TF Applications


There are a lot of Nexperia USA Inc. BCP55-16TF applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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