NSS40601CF8T1G Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 135mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 135mV @ 400mA, 4A.Emitter base voltages of 6V can achieve high levels of efficiency.A transition frequency of 140MHz is present in the part.An input voltage of 40V volts is the breakdown voltage.A maximum collector current of 6A volts is possible.
NSS40601CF8T1G Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 135mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
NSS40601CF8T1G Applications
There are a lot of ON Semiconductor NSS40601CF8T1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
