ZXTN25012EFLTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 500 @ 10mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 5A.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.Collector current can be as low as 2A volts at its maximum.
ZXTN25012EFLTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFLTA Applications
There are a lot of Diodes Incorporated ZXTN25012EFLTA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
