BC857BLT1G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.There is a transition frequency of 100MHz in the part.A breakdown input voltage of 45V volts can be used.Collector current can be as low as 100mA volts at its maximum.
BC857BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT1G Applications
There are a lot of ON Semiconductor BC857BLT1G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
