KSA643YTA Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.A breakdown input voltage of 20V volts can be used.During maximum operation, collector current can be as low as 500mA volts.
KSA643YTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
KSA643YTA Applications
There are a lot of ON Semiconductor KSA643YTA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface