NSS20601CF8T1G Overview
DC current gain in this device equals 200 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 130mV @ 400mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.There is a transition frequency of 140MHz in the part.An input voltage of 20V volts is the breakdown voltage.The maximum collector current is 6A volts.
NSS20601CF8T1G Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 130mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
NSS20601CF8T1G Applications
There are a lot of ON Semiconductor NSS20601CF8T1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
