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2N1480 PBFREE

2N1480 PBFREE

2N1480 PBFREE

Central Semiconductor Corp

2N1480 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N1480 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA 4V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.4V @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 55V
Current - Collector (Ic) (Max) 1.5A
Frequency - Transition 1.5MHz
RoHS StatusROHS3 Compliant
In-Stock:1884 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.410000$3.41
10$3.216981$32.16981
100$3.034888$303.4888
500$2.863102$1431.551
1000$2.701039$2701.039

2N1480 PBFREE Product Details

2N1480 PBFREE Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 200mA 4V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.4V @ 20mA, 200mA.Single BJT transistor shows a 55V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2N1480 PBFREE Features


the DC current gain for this device is 20 @ 200mA 4V
the vce saturation(Max) is 1.4V @ 20mA, 200mA

2N1480 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N1480 PBFREE applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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