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BSP61E6327HTSA1

BSP61E6327HTSA1

BSP61E6327HTSA1

Rochester Electronics, LLC

BSP61E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BSP61E6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 200MHz
RoHS StatusROHS3 Compliant
In-Stock:73590 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.11000$0.11
500$0.1089$54.45
1000$0.1078$107.8
1500$0.1067$160.05
2000$0.1056$211.2
2500$0.1045$261.25

BSP61E6327HTSA1 Product Details

BSP61E6327HTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 10V.When VCE saturation is 1.8V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).This product comes in a PG-SOT223-4 device package from the supplier.The device has a 60V maximal voltage - Collector Emitter Breakdown.

BSP61E6327HTSA1 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the supplier device package of PG-SOT223-4

BSP61E6327HTSA1 Applications


There are a lot of Rochester Electronics, LLC BSP61E6327HTSA1 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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