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MMBT5550-TP

MMBT5550-TP

MMBT5550-TP

Micro Commercial Co

MMBT5550-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website

SOT-23

MMBT5550-TP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C
PackagingCut Tape (CT)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position DUAL
Terminal FormGULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 225mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 140V
Current - Collector (Ic) (Max) 600mA
RoHS StatusROHS3 Compliant
In-Stock:38091 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.200000$0.2
10$0.188679$1.88679
100$0.177999$17.7999
500$0.167924$83.962
1000$0.158419$158.419

MMBT5550-TP Product Details

MMBT5550-TP Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 5mA, 50mA.Single BJT transistor shows a 140V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MMBT5550-TP Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA

MMBT5550-TP Applications


There are a lot of Micro Commercial Co MMBT5550-TP applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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