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ZTX415STZ

ZTX415STZ

ZTX415STZ

Diodes Incorporated

ZTX415STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX415STZ Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Box (TB)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
HTS Code8541.21.00.95
Voltage - Rated DC 100V
Max Power Dissipation680mW
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX415
Pin Count3
Reference Standard CECC
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product40MHz
Transistor Type NPN - Avalanche Mode
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage100V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 260V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:957 items

Pricing & Ordering

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ZTX415STZ Product Details

ZTX415STZ Overview


This device has a DC current gain of 25 @ 10mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Parts of this part have transition frequencies of 40MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

ZTX415STZ Features


the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz

ZTX415STZ Applications


There are a lot of Diodes Incorporated ZTX415STZ applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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