ISL9V5036P3-F085

Name: ISL9V5036P3-F085
Brand: ON Semiconductor
SKU: ISL9V5036P3-F085
Price: 3.78000 USD
Availability: InStock

new-10%

Manufacturer part number:ISL9V5036P3-F085

Manufacturer:ON Semiconductor

Description:ISL9V5036P3-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:ISL9V5036P3-F085 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2017
Series	Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Base Part Number	ISL9V5036
Number of Outputs	1
Operating Supply Voltage	360V
Number of Elements	1
Rise Time-Max	7000ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	250W
Clamping Voltage	360V
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	46A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	390V
Collector Emitter Saturation Voltage	1.17V
Turn On Time	2800 ns
Test Condition	300V, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.6V @ 4V, 10A
Turn Off Time-Nom (toff)	13600 ns
Gate Charge	32nC
Td (on/off) @ 25°C	-/10.8μs
Gate-Emitter Thr Voltage-Max	2.2V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant