NGTB45N60SWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for half-bridge resonant applications. Incorporated into the device is a soft and fast co?packaged free-wheeling diode with a low forward voltage.
NGTB45N60SWG Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are Pb?Free Devices
NGTB45N60SWG Applications
Inductive Heating
Soft Switching
