STGW80V60DF Description
STGW80V60DF, manufactured by STMicroelectronics, is a type of insulated gate bipolar transistor (IGBT) with an advanced proprietary trench gate field stop structure, which is a part of the V series of IGBTs. It is able to deliver both low conduction and low switching losses, so as to improve the efficiency of very high-frequency converters. Based on its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be ensured.
STGW80V60DF Features
Positive VCE(sat) temperature coefficient
Tight parameter distribution
Low conduction and switching losses
Available in the TO-247 and TO-3P package
An advanced proprietary trench gate field stop structure
STGW80V60DF Applications
