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STGP100N30

STGP100N30

STGP100N30

STMicroelectronics

STGP100N30 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP100N30 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series STripFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation250W
Base Part Number STGP100
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Power - Max 250W
Transistor Application GENERAL PURPOSE SWITCHING
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 330V
Max Collector Current 90A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage330V
Test Condition 180V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Turn Off Time-Nom (toff) 310 ns
Td (on/off) @ 25°C -/134ns
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1251 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.40000$6.4
10$5.74800$57.48
100$4.70930$470.93
500$4.00890$2004.45

STGP100N30 Product Details

STGP100N30 Description

STGP100N30 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGP100N30 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

STGP100N30 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

STGP100N30 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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