IGP10N60TXKSA1 Description
The IGP10N60TXKSA1 is an Infineon's 600 V, 10 A single TRENCHSTOP? IGBT3 in a TO220 package, which significantly improves static and the dynamic performance of the device, due to the combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
IGP10N60TXKSA1 Features
Lowest VCEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, stable temperature behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
IGP10N60TXKSA1 Applications
Automotive
Body electronics & lighting
Communications equipment
Wired networking
Industrial
Grid infrastructure
