IRG4BC20UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC20UPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
ULTRA FAST
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
60W
Current Rating
13A
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Input Type
Standard
Turn On Delay Time
21 ns
Transistor Application
POWER CONTROL
Rise Time
13ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
86 ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
13A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Input Capacitance
530pF
Turn On Time
34 ns
Test Condition
480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff)
330 ns
Gate Charge
27nC
Current - Collector Pulsed (Icm)
52A
Td (on/off) @ 25°C
21ns/86ns
Switching Energy
100μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
180ns
Height
16.51mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Contains Lead, Lead Free
In-Stock:10297 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.975293
$2.975293
10
$2.806880
$28.0688
100
$2.648000
$264.8
500
$2.498113
$1249.0565
1000
$2.356711
$2356.711
IRG4BC20UPBF Product Details
IRG4BC20UPBF Description
The IRG4BC20UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, and>200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IRG4BC20UPBF is offered in the TO-220-3 package. It is specified for operation from –55°C to +150°C.
IRG4BC20UPBF Features
UltraFast optimized for high operating frequencies 8 40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO 220AB package
Operating Junction and Storage Temperature Range: -55 to +150℃
Lead-Free
IRG4BC20UPBF Applications
HVAC
Consumer Electronics
Power Management
Steel rolling mills
Large motors with periodic loading
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