FGB20N6S2 Description
The FGH20N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS). The FGH20N6S2 LGC device shortens delay times and reduces the gate drive's power requirement. The Onsemi FGH20N6S2 is ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times, and UIS capability are essential.
FGB20N6S2 Features
100kHz Operation at 390V, 7A
200kHZ Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time: 85nsat TJ= 125°C
Low Gate Charge: 30nC at VGE = 15V
Low Plateau Voltage: 6.5V Typical
Low Conduction Loss
Low Eon
FGB20N6S2 Applications
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
