IRG6B330UDPBF Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6B330UDPBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
High Repetitive Peak Current Capability
Lead-Free Package
