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FGPF70N30

FGPF70N30

FGPF70N30

ON Semiconductor

FGPF70N30 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGPF70N30 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 300V
Max Power Dissipation52W
Current Rating70A
Element ConfigurationSingle
Input Type Standard
Rise Time83ns
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage300V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 20A
Gate Charge71nC
Current - Collector Pulsed (Icm) 160A
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:10300 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.236640$8.23664
10$7.770415$77.70415
100$7.330580$733.058
500$6.915642$3457.821
1000$6.524190$6524.19

FGPF70N30 Product Details

FGPF70N30 Description


The FGPF70N30 is an IGBT employing Unified IGBT Technology. It offers the optimum solution for PDP applications where low-conduction loss is essential.



FGPF70N30 Features


  • High Current Capability

  • Low saturation voltage: VCE(sat) =1.4V @ IC = 40A

  • High Input Impedance

  • Fast switching

  • RoHS Complaint



FGPF70N30 Applications


  • PDP System


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