IKZ50N65ES5XKSA1 Description
IKZ50N65ES5XKSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 650V from Infineon Technologies. IKZ50N65ES5XKSA1 operates between -40°C~175°C TJ, and its Current - Collector Cutoff (Max) is 80A. The IKZ50N65ES5XKSA1 has 4 pins and it is available in
Tube packaging way. IKZ50N65ES5XKSA1 has a 650V Voltage - Collector Emitter Breakdown (Max) value.
IKZ50N65ES5XKSA1 Features
Test Condition: 400V, 25A, 23.1 Ω, 15V
Current - Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Switching Energy: 770μJ (on), 880μJ (off)
Voltage - Collector Emitter Breakdown (Max): 650V
IKZ50N65ES5XKSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
