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STGF6NC60HD

STGF6NC60HD

STGF6NC60HD

STMicroelectronics

STGF6NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF6NC60HD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation20W
Current Rating6A
Base Part Number STGF6
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation20W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time12 ns
Transistor Application POWER CONTROL
Rise Time5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 76 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 6A
Reverse Recovery Time 21 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.9V
Turn On Time17.3 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Continuous Collector Current 6A
Turn Off Time-Nom (toff) 222 ns
Gate Charge13.6nC
Current - Collector Pulsed (Icm) 21A
Td (on/off) @ 25°C 12ns/76ns
Switching Energy 20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 9.3mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5156 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.30000$1.3
50$1.10260$55.13
100$0.90560$90.56
500$0.74812$374.06

STGF6NC60HD Product Details

STGF6NC60HD Description


STGF6NC60HD is an IGBT with N-channels. Utilizing the most advanced technology for high-voltage, based on a patent-pending strip layout, it's developed to be a cutting-edge range of IGBTs. IGBTs have remarkable performance. They are distinguished by their outstanding performance "H" suffix identifies a family that is designed for high-frequency applications that have extremely high switching performance with a very low voltage drop.



STGF6NC60HD Features


Low VCE(sat)
Low CRES/CIES ratio (no cross-conduction susceptibility
Very soft ultra fast recovery anti-parallel diode
High-frequency operation


STGF6NC60HD Applications


High-frequency inverters
SMPS and PFC in both hard switch
Resonant topologies
Motor drivers

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