Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SGB15N120ATMA1

SGB15N120ATMA1

SGB15N120ATMA1

Infineon Technologies

SGB15N120ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SGB15N120ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code no
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 198W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 30A
Turn On Time68 ns
Test Condition 800V, 15A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
Turn Off Time-Nom (toff) 683 ns
IGBT Type NPT
Gate Charge130nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 18ns/580ns
Switching Energy 1.9mJ
RoHS StatusROHS3 Compliant
In-Stock:1781 items

Pricing & Ordering

QuantityUnit PriceExt. Price

SGB15N120ATMA1 Product Details

SGB15N120ATMA1 Description


Fast NPT-technology IGBT



SGB15N120ATMA1 Features


? A 40% decrease in Eoff from the previous generation


? 10 s is the short circuit withstand time.



SGB15N120ATMA1 Applications


Switching applications


Get Subscriber

Enter Your Email Address, Get the Latest News