BCP53-16T1G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.5A current rating.As you can see, the part has a transition frequency of 50MHz.As a result, it can handle voltages as low as 80V volts.In extreme cases, the collector current can be as low as 1.5A volts.
BCP53-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
BCP53-16T1G Applications
There are a lot of ON Semiconductor BCP53-16T1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
