2N4919G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 500mA 1V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 3A volts is possible.
2N4919G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4919G Applications
There are a lot of ON Semiconductor 2N4919G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
