NJVMJD253T4G-VF01 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 200mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.Parts of this part have transition frequencies of 40MHz.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
NJVMJD253T4G-VF01 Features
the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 40MHz
NJVMJD253T4G-VF01 Applications
There are a lot of ON Semiconductor NJVMJD253T4G-VF01 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
