2DA1201Y-7 Overview
This device has a DC current gain of 120 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Continuous collector voltages of -800mA should be maintained to achieve high efficiency.The emitter base voltage can be kept at -7V for high efficiency.There is a transition frequency of 160MHz in the part.Breakdown input voltage is 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2DA1201Y-7 Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz
2DA1201Y-7 Applications
There are a lot of Diodes Incorporated 2DA1201Y-7 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
