NS2029M3T5G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 140MHz.The maximum collector current is 100mA volts.
NS2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
NS2029M3T5G Applications
There are a lot of ON Semiconductor NS2029M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
