MJE182G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 100mA 1V.The collector emitter saturation voltage is 1.7V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.The part has a transition frequency of 50MHz.When collector current reaches its maximum, it can reach 3A volts.
MJE182G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE182G Applications
There are a lot of ON Semiconductor MJE182G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
