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BC817K-25R

BC817K-25R

BC817K-25R

Nexperia USA Inc.

BC817K-25R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC817K-25R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
In-Stock:193130 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.223616$0.223616
10$0.210958$2.10958
100$0.199017$19.9017
500$0.187752$93.876
1000$0.177125$177.125

BC817K-25R Product Details

BC817K-25R Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC817K-25R Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC817K-25R Applications


There are a lot of Nexperia USA Inc. BC817K-25R applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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