BC847BT,115 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BC847BT,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC847BT,115 Applications
There are a lot of NXP USA Inc. BC847BT,115 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
