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2SCR293P5T100

2SCR293P5T100

2SCR293P5T100

ROHM Semiconductor

2SCR293P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR293P5T100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2017
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation500mW
Terminal Position SINGLE
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 320MHz
Max Breakdown Voltage 30V
Frequency - Transition 320MHz
RoHS StatusROHS3 Compliant
In-Stock:17759 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.090120$0.09012
500$0.066265$33.1325
1000$0.055221$55.221
2000$0.050661$101.322
5000$0.047347$236.735
10000$0.044044$440.44
15000$0.042595$638.925
50000$0.041883$2094.15

2SCR293P5T100 Product Details

2SCR293P5T100 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 500mA.A transition frequency of 320MHz is present in the part.Breakdown input voltage is 30V volts.During maximum operation, collector current can be as low as 1A volts.

2SCR293P5T100 Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 25mA, 500mA
a transition frequency of 320MHz

2SCR293P5T100 Applications


There are a lot of ROHM Semiconductor 2SCR293P5T100 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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