2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 30mV ensures maximum design flexibility.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, the part has a transition frequency of 250MHz.Input voltage breakdown is available at 15V volts.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor 2SD1048-7-TB-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
