MMBTA42LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA42LT3G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3G Applications
There are a lot of ON Semiconductor MMBTA42LT3G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
