DSS60600MZ4-13 Overview
In this device, the DC current gain is 120 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 350mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.100MHz is present in the transition frequency.Breakdown input voltage is 60V volts.Maximum collector currents can be below 6A volts.
DSS60600MZ4-13 Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
DSS60600MZ4-13 Applications
There are a lot of Diodes Incorporated DSS60600MZ4-13 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
