BST52,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.The collector emitter saturation voltage is 1.3V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 500μA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 200MHz is present in the part.When collector current reaches its maximum, it can reach 1A volts.
BST52,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BST52,115 Applications
There are a lot of Nexperia USA Inc. BST52,115 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
