PBSS4032PZ,115 Overview
This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 200mA, 4A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.There is a breakdown input voltage of 30V volts that it can take.Maximum collector currents can be below 4.4A volts.
PBSS4032PZ,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V
PBSS4032PZ,115 Applications
There are a lot of Nexperia USA Inc. PBSS4032PZ,115 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
