BCP5116TA Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Parts of this part have transition frequencies of 150MHz.As a result, it can handle voltages as low as 45V volts.A maximum collector current of 1A volts can be achieved.
BCP5116TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5116TA Applications
There are a lot of Diodes Incorporated BCP5116TA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
