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BC856T,115

BC856T,115

BC856T,115

NXP USA Inc.

BC856T,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

BC856T,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SC-75
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC856
Power - Max 150mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:413593 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.02000$0.02
500$0.0198$9.9
1000$0.0196$19.6
1500$0.0194$29.1
2000$0.0192$38.4
2500$0.019$47.5

BC856T,115 Product Details

BC856T,115 Overview


In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of SC-75.Single BJT transistor shows a 65V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC856T,115 Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the supplier device package of SC-75

BC856T,115 Applications


There are a lot of NXP USA Inc. BC856T,115 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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