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2N5876

  • 2N5876 - 2N5876 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • 2N5876 - 2N5876 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

2N5876

2N5876

Microsemi Corporation

2N5876 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5876 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-3
Transistor Element Material SILICON
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation150W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Number of Elements 1
Polarity PNP
Power Dissipation150W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain-Min (hFE) 20
RoHS StatusNon-RoHS Compliant
In-Stock:172 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$39.28050$3928.05

2N5876 Product Details

2N5876 Overview


When collector current reaches its maximum, it can reach 10A volts.

2N5876 Features



2N5876 Applications


There are a lot of Microsemi Corporation 2N5876 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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