BC807-25-7-F Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.This device can take an input voltage of 45V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC807-25-7-F Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25-7-F Applications
There are a lot of Diodes Incorporated BC807-25-7-F applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
