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PBSS4130QAZ

PBSS4130QAZ

PBSS4130QAZ

Nexperia USA Inc.

PBSS4130QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4130QAZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Power - Max 325mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 245mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 190MHz
RoHS StatusROHS3 Compliant
In-Stock:146665 items

Pricing & Ordering

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PBSS4130QAZ Product Details

PBSS4130QAZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 1A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 245mV @ 50mA, 1A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PBSS4130QAZ Features


the DC current gain for this device is 180 @ 1A 2V
the vce saturation(Max) is 245mV @ 50mA, 1A

PBSS4130QAZ Applications


There are a lot of Nexperia USA Inc. PBSS4130QAZ applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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