PBSS4032PD,115 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 395mV @ 300mA, 3A.Emitter base voltages of -5V can achieve high levels of efficiency.104MHz is present in the transition frequency.As a result, it can handle voltages as low as 30V volts.Collector current can be as low as 2.7A volts at its maximum.
PBSS4032PD,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 395mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 104MHz
PBSS4032PD,115 Applications
There are a lot of Nexperia USA Inc. PBSS4032PD,115 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
