JANTXV2N2219A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor comes in a supplier device package of TO-205AD.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
JANTXV2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-205AD
JANTXV2N2219A Applications
There are a lot of Microsemi Corporation JANTXV2N2219A applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
