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PN4250A PBFREE

PN4250A PBFREE

PN4250A PBFREE

Central Semiconductor Corp

PN4250A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

PN4250A PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature-65°C~150°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
RoHS StatusROHS3 Compliant
In-Stock:15526 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.399000$0.399
10$0.376415$3.76415
100$0.355109$35.5109
500$0.335008$167.504
1000$0.316045$316.045

PN4250A PBFREE Product Details

PN4250A PBFREE Overview


In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.The device has a 60V maximal voltage - Collector Emitter Breakdown.

PN4250A PBFREE Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA

PN4250A PBFREE Applications


There are a lot of Central Semiconductor Corp PN4250A PBFREE applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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