ZXT13P40DE6TA Overview
In this device, the DC current gain is 300 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -175mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at -3A.The emitter base voltage can be kept at 7.5V for high efficiency.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 115MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXT13P40DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 240mV @ 300mA, 3A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3A
a transition frequency of 115MHz
ZXT13P40DE6TA Applications
There are a lot of Diodes Incorporated ZXT13P40DE6TA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
