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BC858CMTF

BC858CMTF

BC858CMTF

ON Semiconductor

BC858CMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC858CMTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 day ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation310mW
Terminal Position DUAL
Terminal FormGULL WING
Current Rating-100mA
Frequency 150MHz
Base Part Number BC858
Number of Elements 1
Element ConfigurationSingle
Power Dissipation310mW
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage-250mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 110
Height 930μm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:367682 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.059622$0.059622
500$0.043840$21.92
1000$0.036533$36.533
2000$0.033517$67.034
5000$0.031324$156.62
10000$0.029139$291.39
15000$0.028181$422.715
50000$0.027710$1385.5

BC858CMTF Product Details

BC858CMTF Overview


This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.As a result, the part has a transition frequency of 150MHz.There is a breakdown input voltage of 30V volts that it can take.The maximum collector current is 100mA volts.

BC858CMTF Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz

BC858CMTF Applications


There are a lot of ON Semiconductor BC858CMTF applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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